GS61008P 100V Enhancement Mode GaN Transistor

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  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 V / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 7.6 x 4.6 mm2 PCB footprint
  • Source Sense (SS) pin for optimized gate drive
  • RoHS 3 (6+4) compliant


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